Features

  • High stability VCXO, ±0.1ppm over -10° to +70°C
  • Suitable for base stations (Femtocell) requiring high stability
  • Output HCMOS or clipped sine wave available
  • Exceptionally good value for close-to OCXO performance
  • Low power use, 4mA for HCMOS, 2.4mA max for clipped sine
  • Lower phase noise available by external capacitor

Typical Applications

Specifications

Product Series Code: XOVN-9000B
Frequency Range: 10.0MHz to 52.0MHz
Output Waveform: HCMOS (code CM) Clipped Sine Wave (code CS)
Operating Conditions Operating Temperature: -40° to +85°C Storage Temperture: -40° to +85°C Input Voltage: +2.7V to+5.5VDC
Frequency Tolerance: ±1.5ppm max. (at 25°C ambient, after reflow)
Temperature Stability: ±0.1ppm over -10° to +50°C ±0.4ppm over -40° to +85°C
Voltage Coefficient: ±0.05ppm max. at VDD±5%
Load Coefficient: ±0.05ppm max. Load ±10%
Ageing: ±0.5ppm max. at 25°C ±3°C for first year
Output Load HCMOS output: 15pF maximum Clipped Sine Wave output: 10kΩ//10pF
Output Level Clipped sine wave: 0.8Vp-p min. HCMOS: '0' Level: Vol: 10% Vdd max. '1' Level: Voh: 90% Vdd min.
Symmetry: 45/55%
Rise and fall times: 5ns max.
Input current HCMOS: 4.0mA max. (no load) Clipped Sine Wave: 2.4mA max. fo = 19.2MHz, Vdd = 3.3V
Frequency Controlled Range: ±3ppm to ±15ppm Vcon=+1.5V±1.0V Positive slope
Standard Frequencies: 10.0, 12.8, 13.0, 16.0, 19.2, 20.0, 24.576, 25.0, 26.0, 27.0, 40.0 and 50.0MHz.